Dr. Shubhra Pasayat

My primary research interests include the design and growth of wide and ultra-wide bandgap materials such as group-III (Aluminum, Gallium, Indium) nitride and oxide using metal-organic chemical vapor deposition or MOCVD. MOCVD is the preferred mode of material growth in the industry for III-Vs, hence MOCVD grown materials can be found in everyday electronics products. I utilize these materials in various optoelectronic devices such as LEDs and LASERs, finding widespread applications in displays, vehicle headlamps, Li-Fi, artificial horticulture, bio-photonics, and also in water/large-area sanitization. These materials can also be used in electronics applications in the form of high-electron mobility transistors (HEMTs) facilitating efficient power conversion (electric cars) and high-frequency communication (5G, 6G, and beyond).